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Form-birefringence structure fabrication in GaAs by use of SU-8 as a

Form-birefringence structure fabrication in GaAs by use of SU-8 as a 2025

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The document discusses the fabrication of form-birefringent structures in Gallium Arsenide (GaAs) using a thin layer of SU-8 as a dry-etching mask. It details the process of creating submicrometer patterns through holographic lithography and optimizing etching parameters in a chemically assisted ion-beam-etching system to achieve high etching selectivity and smooth profiles. The application demonstrated is a half-wavelength retardation plate for 1.55 μm wavelength, showcasing the potential for miniaturized polarization control devices in integrated optical systems.

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