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The MBE method can be combined with the middle layer grown in Stranski-Krastanov mode to get a layer of quantum dots. This layer can function as the active gain medium in quantum dot lasers. Quantum dot lasers are better than quantum well lasers as they increase quantum efficiency and are more stable with temperature.
The basic principle of operation of quantum well lasers (QWLs) is the same as that of bulk lasers. But, the change in dimension of the carrier motion causes improvement in the characteristics, e.g., ultra-low threshold current, narrow gain spectrum and high characteristic temperature.
A disadvantage is that MQW lasers produce a broader linewidth than SQW ones (but still narrower than comparable non-QW structures). Perhaps the most important characteristic of a semiconductor junction is the fact that the crystalline structure of the material must be continuous across the junction.
Quantum wells transmit electrons of any energy above a certain level, while quantum dots pass only electrons of a specific energy. One possible application is to convert waste heat from electric circuits, e.g., in computer chips, back into electricity, reducing the need for cooling and energy to power the chip.
Quantum-well (QW) active semiconductor lasers enjoy widespread commercial use in optoelectronic applications ranging from high-power sources for medical therapy, material processing, laser printing, and pumps for solid-state lasers to lower output power single-mode, single-frequency sources for telecommunications.
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