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Prior to high-temperature production, a cleaning process called RCA clean is used to reduce wafer surface impurities and prevent contamination of tools. The process involves loading silicon wafers into PTFE Teflon cassettes that can withstand strong oxidants and acids. The cleaning bars are filled with solution and heated to high temperatures. RCA one removes organic particles using a mixture of ammonium hydroxide, hydrogen peroxide, and deionized water, followed by a cycle in deionized water. RCA 2 removes metallic contaminants with a solution of hydrochloric acid, hydrogen peroxide, and deionized water heated to 75 degrees Celsius. Wafers are submerged for six minutes before transfer.
