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my name is Ning Jing the principal engineer working at the digital design methodology team Global Foundries 22 FDX technology is a new 22 nanometer fully depleted silicon insulator technology offer offered by Global Foundries we introduced this insulator layer underneath the channel so we can reduce the diffusion to substrate diode effect and the leakage in that direction will be reduced that way we can start applying poly PIamp;#39;s on the substrate without increasing the leakage current too much so in 22 FDX technology we offer two types of device structure one of them is using reverse body bias and the other one use forward body bias so the reverse body bias device is actually the traditional simul structure that we apply we have a most on the P well and P Moamp;#39;s and well so when we start applying body bias on the substrate we can start raising the threshold voltage of those devices and on the other side we have forward by the bias device which used flipped well means we hav
